Antilocalization effect on photo-generated carriers in semi-insulating gaas sample

Materials Research

Volumn 15, Issue 4, 2012, Pages 530-535

  Viana, Emilson Ribeiro ^a   Ribeiro, Geraldo Mathias ^a   De Oliveira, Alfredo Gontijo ^a   Peres, Marcelos Lima ^b   Rubinger, Rero Marques ^b   Rubinger, Carla Patrícia Lacerda ^b  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^b FEDERAL UNIVERSITY OF ITAJUBÁ   (Brazil)

Author keywords

Antilocalization; Deep level defects; Semi insulating GaAs

Indexed keywords

ANTI-LOCALIZATION EFFECTS; ANTILOCALIZATION; DEEP-LEVEL DEFECTS; ELECTRICAL CARRIERS; HOLE CARRIERS; LIGHT EXCITATION; LOW TEMPERATURE GROWTH; MAGNETORESISTANCE MEASUREMENTS; PHOTOGENERATED CARRIERS; POSITIVE MAGNETORESISTANCE; ROOM TEMPERATURE; SEMI-INSULATING GAAS; WEAK ANTILOCALIZATION;

DEFECTS; ELECTRIC RESISTANCE; GALLIUM ARSENIDE; INSULATION; MAGNETORESISTANCE;

SEMICONDUCTING GALLIUM;

EID: 84865956202     PISSN: 15161439     EISSN: None     Source Type: Journal    
DOI: 10.1590/S1516-14392012005000065     Document Type: Article

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