Temperature dependence of the equilibrium hall concentration in silicon planar-doped GaAs samples

Solid State Communications

Volumn 98, Issue 12, 1996, Pages 1063-1068

  Correa J A F ^a   De Oliveira, A G ^a   Da Silva, M I N ^a   Moreira, M V B ^a   Ribeiro, G M ^a   Chacham, H ^a  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

Author keywords

A. semiconductors; B. epitaxy; D. electronic transport; D. thermodynamic properties

Indexed keywords

CARRIER CONCENTRATION; ELECTRONIC PROPERTIES; MOLECULAR BEAM EPITAXY; PHASE EQUILIBRIA; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES;

ELECTRONIC TRANSPORT; EQUILIBRIUM HALL CONCENTRATION; HALL CARRIER CONCENTRATION; HALL MOBILITY; SILICON PLANAR DOPED GALLIUM ARSENIDE; SUBBAND MODEL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030166727     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00146-9     Document Type: Article

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