Bond lengths and lattice structure of InP 0.52Sb 0.48 grown on GaAs

Applied Physics Letters

Volumn 101, Issue 9, 2012, Pages

  Wu, Chen Jun ^a   Feng, Zhe Chuan ^a   Chang, Wen Ming ^a   Yang, Chih Chung ^a   Lin, Hao Hsiung ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DISTORTION ENERGY; END POINTS; EXAFS; EXTENDED X-RAY ABSORPTION FINE STRUCTURE MEASUREMENTS; GAAS; INP; LATTICE STRUCTURES; RECIPROCAL SPACE MAPPING; RESIDUAL STRAINS; SUPER CELL; VALENCE-FORCE FIELD MODEL;

EXTENDED X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY; GALLIUM ARSENIDE; INDIUM ANTIMONIDES; SEMICONDUCTING GALLIUM;

BOND LENGTH;

EID: 84865843693     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4748295     Document Type: Article

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