Characterization of MOVPE grown InPSb/InAs heterostructures

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 746-750

  Drews, D ^a   Schneider, A ^a   Werninghaus, T ^a   Behres, A ^b   Heuken, M ^b   Heime, K ^b   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

InPSb; LP MOVPE; Mid infrared opto electronic; Miscibility gap; Raman spectroscopy

Indexed keywords

DEPOSITION; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; PHONONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

LATTICE MATCHING; LOW PRESSURE METALLORGANIC VAPOR PHASE EPITAXY (LP MOVPE); PLASMON PHONON COUPLING;

HETEROJUNCTIONS;

EID: 18744421856     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00549-7     Document Type: Article

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