Charge collection in amorphous silicon solar cells: Cell analysis and simulation of high-efficiency pin devices

Journal of Non-Crystalline Solids

Volumn 358, Issue 17, 2012, Pages 2187-2189

  Stuckelberger, Michael ^a   Riesen, Yannick ^a   Perruche, Brice ^a   Despeisse, Matthieu ^a   Wyrsch, Nicolas ^a   Ballif, Christophe ^a  

^a EPFL   (Switzerland)

Author keywords

a Si:H; Charge collection; Charged dangling bonds; Electric field deformation; Thin film silicon solar cells

Indexed keywords

A-SI:H; CELL ANALYSIS; CHARGE COLLECTION; CRUCIAL PARAMETERS; EXPERIMENTAL TECHNIQUES; FIELD DEFORMATIONS; FREE CARRIERS; I-LAYER; IN-BAND; INITIAL STATE; META-STABLE; POSITIVELY CHARGED; THIN-FILM SILICON SOLAR CELLS;

COMPUTER SIMULATION; DANGLING BONDS; DEFORMATION; DEGRADATION; ELECTRIC FIELDS; SILICON; SILICON SOLAR CELLS;

INTERFACE STATES;

EID: 84865766160     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2011.11.013     Document Type: Conference Paper

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