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Volumn , Issue , 2010, Pages 1569-1574
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Internal electric field and fill factor of amorphous silicon solar cells
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Author keywords
[No Author keywords available]
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Indexed keywords
A-SI:H;
BAND TAIL;
CARRIER DENSITY;
CARRIER GENERATION;
CELL PERFORMANCE;
CHARGE COLLECTION;
CHARGE STATE;
CHARGED DEFECTS;
CLASSICAL MODEL;
CRUCIAL PARAMETERS;
EXPERIMENTAL OBSERVATION;
EXTERNAL QUANTUM EFFICIENCY;
FIELD DEFORMATIONS;
FILL FACTOR;
GLASS SUBSTRATES;
HIGH DENSITY;
HYDROGENATED AMORPHOUS SILICON (A-SI:H);
I-LAYER;
INTENSITY MEASUREMENTS;
INTERNAL ELECTRIC FIELDS;
LIGHT INTENSITY;
OUTPUT PERFORMANCE;
AMORPHOUS SILICON;
ELECTRIC FIELDS;
PHOTOVOLTAIC EFFECTS;
QUANTUM THEORY;
SOLAR CELLS;
SUBSTRATES;
DANGLING BONDS;
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EID: 78650168085
PISSN: 01608371
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/PVSC.2010.5617122 Document Type: Conference Paper |
Times cited : (21)
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References (6)
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