Domain wall motion in A and B site donor-doped Pb (Zr 0.52 Ti 0.48) O 3 films

Journal of the American Ceramic Society

Volumn 95, Issue 9, 2012, Pages 2906-2913

  Zhu, Wanlin ^a,b   Fujii, Ichiro ^a   Ren, Wei ^b   Trolier Mckinstry, Susan ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SOLUTIONS; DIELECTRIC PERMITTIVITIES; DOMAIN WALL MOTION; DONOR DOPING; DONOR-DOPED; EFFECT OF DOPANTS; ELECTROMECHANICAL RESPONSE; FERROELECTRIC DOMAINS; LA DOPING; LOW FIELD; PZT; PZT FILM; RAYLEIGH CONSTANT; RAYLEIGH PARAMETERS;

DOMAIN WALLS; LEAD; PERMITTIVITY; ZIRCONIUM;

SEMICONDUCTOR DOPING;

EID: 84865709098     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2012.05243.x     Document Type: Conference Paper

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