Electroluminescence properties of In-doped Zn 2SiO 4 thin films prepared by sol-gel process

Physica B: Condensed Matter

Volumn 407, Issue 21, 2012, Pages 4308-4312

  Ogawa, Hirotaka ^a   Kan, Akinori ^a   Ikeda, Norihiro ^b   Fujita, Akihiro ^a  

^a MEIJO UNIVERSITY   (Japan)

^b KICTEC INC   (Japan)

Author keywords

Electroluminescence; In doping; Sol gel; Thin film; Zn 2SiO 4

Indexed keywords

BATIO; BLUE EMISSION; COLOR COORDINATES; EFFECT OF IN; ELECTROLUMINESCENCE PROPERTIES; MAXIMUM LUMINANCE; SECONDARY PHASE; SINGLE PHASE; THIN-FILM ELECTRO-LUMINESCENT DEVICES;

ELECTROLUMINESCENCE; INDIUM; SOL-GEL PROCESS; SOL-GELS; THIN FILMS; X RAY POWDER DIFFRACTION; ZINC;

THIN FILM DEVICES;

EID: 84865696635     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2012.07.023     Document Type: Article

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