Indium- and Tungsten-Doped ZnGa2O4 Phosphor

Journal of Electronic Materials

Volumn 33, Issue 1, 2004, Pages

  Yang, Su Hua ^a  

^a NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

Author keywords

Cathodoluminescence; Electrophoresis; Emission; Phosphor

Indexed keywords

ANNEALING; CATHODOLUMINESCENCE; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTROPHORESIS; ENERGY DISPERSIVE SPECTROSCOPY; FIELD EMISSION DISPLAYS; INDIUM; METALLIC FILMS; OPTIMIZATION; SCANNING ELECTRON MICROSCOPY; TUNGSTEN; X RAY DIFFRACTION ANALYSIS; ZINC COMPOUNDS;

ELECTRON EXCITATION; PHOSPHOR FILMS;

PHOSPHORS;

EID: 0742285752     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0299-z     Document Type: Article

References (8)

1. W.C. Wang, C.H. Tsai, K.L. Tsai, and Y.S. Fran, 11th Int. Vacuum Microelectronics Conf. (Piscataway, NJ: IEEE, 1998), pp. 38-39.
2. C. Xie, 8th Int. Vacuum Microelectronics Conf. (New York: IEEE, 1995), pp. 149-153.
3. F. Ito, Y. Tomihari, Y. Okada, K. Konuma, and A. Okamoto, IEEE Electron Dev. Lett. 22, 426 (2001).
4. W.K. Yi et al. Electron. Lett. 37, 879 (2001).
5. K. Kajiwara, T. Hida, and K. Tanaka, 14th Int. Vacuum Microelectronics Conf. (Piscataway, NJ: IEEE, 2001), pp. 185-186.
6. P.H. Holloway, S. Jones, T. Trottier, and J. Sebastian, 11th Int. Vacuum Microelectronics Conf. (Piscataway, NJ: IEEE, 1998), pp. 49-50.
7. A.P. Burden, Int. Mater. Rev. 46, 213 (2001).
8. F.A. Kröger and V.J. Vink, Solid State Phys. 3, 307 (1956).