Origin of thermal degradation of Sr 2-xSi 5N 8:Eu x phosphors in air for light-emitting diodes

Journal of the American Chemical Society

Volumn 134, Issue 34, 2012, Pages 14108-14117

  Yeh, Chiao Wen ^a   Chen, Wei Ting ^a   Liu, Ru Shi ^a   Hu, Shu Fen ^b   Sheu, Hwo Shuenn ^c   Chen, Jin Ming ^c   Hintzen, Hubertus T ^d  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^d EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; COLOR RENDERING INDEX; CRYSTAL STRUCTURAL; ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS; HEATING PROCESS; HEATING TREATMENTS; HIGH PERFORMANCE APPLICATIONS; IN-SITU XRD; LUMINESCENT MATERIAL; NITRIDE PHOSPHOR; NITRIDOSILICATES; ORANGE-RED; TRANSMISSION ELECTRON MICROSCOPY TEM; WHITE LIGHT EMISSION; WHITE LIGHT EMITTING DIODES;

AMORPHOUS SILICON; DEGRADATION; ELECTRON SPECTROSCOPY; EUROPIUM; LIGHT EMISSION; LIGHT EMITTING DIODES; NITRIDES; PHOSPHORS; SILICON; SOLID STATE REACTIONS; TRANSMISSION ELECTRON MICROSCOPY;

EUROPIUM COMPOUNDS;

BARIUM; EUROPIUM; NITRIDOSILICATE PHOSPHOR; PHOSPHORUS DERIVATIVE; SILICON; STRONTIUM; UNCLASSIFIED DRUG;

AIR; ARTICLE; CHEMICAL ANALYSIS; CRYSTAL STRUCTURE; DEGRADATION; HEATING; LIGHT EMITTING DIODE; MORPHOLOGY; OXIDATION; SOLID STATE; THERMAL DEGRADATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 84865647925     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja304754b     Document Type: Article

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