Electron trapping at the lattice Ti atoms adjacent to the Nb dopant in Nb-doped rutile TiO2

Journal of Materials Science

Volumn 47, Issue 21, 2012, Pages 7522-7529

  Kamisaka, Hideyuki ^a   Mizuguchi, Nanako ^a   Yamashita, Koichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STATE; ELECTRON TRAPPING; FIRST PRINCIPLES; INDIUM TIN OXIDE; POPULATION ANALYSIS; SPIN-POLARIZED; TRANSPARENT CONDUCTING OXIDE; UNIT CELL SIZE;

ELECTRON TRAPS; OXIDE MINERALS; TITANIUM DIOXIDE;

DOPING (ADDITIVES);

EID: 84865270057     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-012-6491-2     Document Type: Article

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