Interdigitated back-contacted silicon heterojunction solar cells with improved fill factor and efficiency

IEEE Journal of Photovoltaics

Volumn 1, Issue 2, 2011, Pages 130-134

  Haschke, Jan ^a   Mingirulli, Nicola ^a   Gogolin, Ralf ^b   Ferré, Rafel ^b   Schulze, Tim F ^a   Düsterhöft, Jan ^a   Harder, Nils Peter ^b   Korte, Lars ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

a Si:H c Si; back contacted; fill factor; heterojunction; ideality

Indexed keywords

A-SI:H; BACK CONTACTED; CHARGE-CARRIER TRANSPORT; FILL-FACTOR; IDEALITY; J-V CHARACTERISTICS; LIFETIME MEASUREMENTS; LOSS MECHANISMS; P-TYPE; RECOMBINATION CURRENTS; SERIES RESISTANCES; SILICON HETEROJUNCTIONS; SOLAR CELL STRUCTURES;

BUFFER LAYERS; ELECTRIC RESISTANCE; HETEROJUNCTIONS; SOLAR CELLS;

SILICON;

EID: 84865181218     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2011.2169943     Document Type: Article

References (25)

1. T. Mishima, M. Taguchi, H. Sakata, and E. Maruyama, "Development status of high-efficiency HIT solar cells," Solar Energy Mater. Solar Cells, vol. 95, no. 1, pp. 18-21, Jan. 2011.
2. D. De Ceuster, "Low cost, high volume production of >22% efficiency silicon solar cells," in Proc. 22nd Eur. Photovoltaic Spec. Conf., Milan, Italy, 2007, pp. 816-819.
3. M. Tucci, L. Serenelli, P. Martufi, E. Salza, S. De Iuliis, L. Geerligs, G. de Cesare, D. Caputo, and M. Ceccarelli, "Back enhanced heterostructure with interdigitated contact - BEHIND - solar cell," in Proc. IEEE Conf. Optoelectronic Microelectronic Mater. Devices, 2008, pp. 242-245.
4. B. Shu, U. Das, J. Appel, B. McCandless, S. Hegedus, and R. Birkmire, "Alternative approaches for low temperature front surface passivation of interdigitated back contact silicon heterojunction solar cell," in Proc. 35th IEEE Photovoltaic Spec. Conf., Honolulu, 2010, pp. 3223-3228.
5. T. Desrues, F. Souche, A. Vandeneynde, D. Munoz, A.-S. Ozanne, and P.-J. Ribeyron, "Emitter optimization for interdigitated back contact (IBC) silicon heterojunction (Si-HJ) solar cells," in Proc. 25th Eur. Photovoltaic Spec. Conf. Exhib., Valencia, Spain, 2010, pp. 2374-2377.
6. R. Stangl, M. Bivour, E. Conrad, I. Didschuns, L. Korte, K. Lips, and M. Schmidt, "RECASH - A novel high efficiency buried grid rear contact amorphous/crystalline silicon heterojunction solar cell concept," in Proc. 22nd Eur. Photovoltaic Spec. Conf., Milan, Italy, 2007, pp. 870-874.
7. R. Stangl, J. Haschke, M. Bivour, L. Korte, M. Schmidt, K. Lips, and B. Rech, "Planar rear emitter back contact silicon heterojunction solar cells," Solar Energy Mater. Solar Cells, vol. 93, no. 10, pp. 1900-1903, 2009.
8. T. Desrues, P.-J. Ribeyron, A. Vandeneynde, A.-S. Ozanne, D. Munoz, F. Souche, C. Denis, and D. Heslinga, "Progress in contacting a-Si:H/c-Si heterojunction solar cells and its application to interdigitated back contact structure," in Proc. 24th Eur. Photovoltaic Spec. Conf. Exhib., Hamburg, Germany, 2009, pp. 2202-2205.
9. M. J. Lu, U. Das, S. Bowden, and R. Birkmire, "Rear surface passivation of interdigitated back contact silicon heterojunction solar cell and 2D simulation study," in Proc. 33rd IEEE Photovoltaic Spec. Conf., 2008, pp. 1651-1655.
10. M. Tucci, S. De Iuliis, L. Serenelli, M. Izzi, E. Salza,V. De Luca, F.Velardi, N. Sanseverino, G. de Cesare, and D. Caputo, "Behind 2.0: The back enhanced heterostructure with interdigitated contact solar cell evolution," in Proc. 25th Eur. Photovoltaic Spec. Conf. Exhib., Valencia, Spain, 2010, pp. 2089-2093.
11. M. J. Lu, S. Bowden, U. Das, and R. Birkmire, "Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation," Appl. Phys. Lett., vol. 91, no. 6, pp. 063507-1-063507-3, 2007.
12. N. Mingirulli, J. Haschke, R. Gogolin, R. Ferr'e, T. F. Schulze, J. Düsterhöft, N.-P. Harder, L. Korte, R. Brendel, and B. Rech, "Efficient interdigitated back-contacted silicon heterojunction solar cells," Phys. Status Solidi Rapid Res. Lett., vol. 5, no. 4, pp. 159-161, 2011.
13. A. Hertanto, H. Liu, D. Yeghikyan, B. G. Rayaprol, N. P. Kherani, and S. Zukotynski, "Back amorphous-crystalline silicon heterojunction (BACH) photovoltaic device," in Proc. 34th IEEE Photovoltaic Spec. Conf., 2009, pp. 1767-1770.
14. Y. Larionova, V.Mertens, N.-P. Harder, and R. Brendel, "Surface passivation of n-type Czochralski silicon substrates by thermal-SiO2/ plasmaenhanced chemical vapor deposition SiN stacks," Appl. Phys. Lett., vol. 96, no. 3, pp. 032105-1-032105-3, 2010.
15. R. A. Sinton andA.Cuevas, "Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data," Appl. Phys. Lett., vol. 69, no. 17, pp. 2510-2512, 1996. (Pubitemid 126595545)
16. H. Nagel, C. Berge, and A. G. Aberle, "Generalized analysis of quasisteady- state and quasi-transientmeasurements of carrier lifetimes in semiconductors," J. Appl. Phys., vol. 86, no. 11, pp. 6218-6221, Dec. 1999. (Pubitemid 129647838)
17. A. G. Aberle, S. J. Robinson, A.Wang, J. Zhao, S. R.Wenham, andM. A. Green, "High-efficiency silicon solar cells: Fill factor limitations and nonideal diode behaviour due to voltage-dependent rear surface recombination velocity," Prog. Photovoltaics, vol. 1, no. 2, pp. 133-143, 1993.
18. M. Tanaka, M. Taguchi, T. Matsuyama, T. Sawada, S. Tsuda, S. Nakano, H. Hanafusa, and Y. Kuwano, "Development of new a-Si/c-Si heterojunction solar cells: ACJ-HIT (artificially constructed junction-heterojunction with intrinsic thin-layer)," Jpn. J. Appl. Phys., vol. 31, pp. 3518-3522, 1992. (Pubitemid 23599992)
19. M. Taguchi, A. Terakawa, E. Maruyama, and M. Tanaka, "Obtaining a higher VOC in HIT cells," Prog. Photovoltaics, vol. 13, pp. 481-488, 2005.
20. U. K. Das, M. Z. Burrows,M.Lu, S. Bowden, and R.W. Birkmire, "Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films," Appl. Phys. Lett., vol. 92, pp. 063504-1-063504-3, 2008.
21. Swanson and Sinton, Advances in Solar Energy: High Efficiency Silicon Solar Cells. New York: Plenum, 1990, p. 437.
22. S. Hermann, P. Engelhart, A. Merkle, T. Neubert, T. Brendemühl, R. Meyer, N.-P. Harder, and R. Brendel, "21.4%-efficient emitter wrapthrough RISE solar cell on large area and picosecond laser processing of local contact openings," in Proc. 22nd Eur. Photovoltaic Spec. Conf., Milan, Italy, 2007, pp. 970-975.
23. S. Hermann, T. Neubert, B. Wolpensinger, N.-P. Harder, and R. Brendel, "Process characterisation of picosecond laser ablation of SIO2 and SiNx layers on planar and textured surfaces," in Proc. 23rd Eur. Photovoltaic Spec. Conf., Valencia, Spain, 2008, pp. 1204-1208.
24. M. Wolf and H. Rauschenbach, "Series resistance effects on solar cell measurements," Adv. Energy Convers., vol. 3, no. 2, pp. 455-479, 1963.
25. T. F. Schulze, L. Korte, E. Conrad, M. Schmidt, and B. Rech, "Electrical transport mechanisms in a-Si:H/c-Si heterojunction solar cells," J. Appl. Phys., vol. 107, pp. 023711-1-023711-13, 2010.