Bifacial growth InGaP/GaAs/InGaAs concentrator solar cells

IEEE Journal of Photovoltaics

Volumn 2, Issue 3, 2012, Pages 371-376

  Wojtczuk, Steven ^a   Chiu, Philip ^a   Zhang, Xuebing ^a   Pulver, Daryl ^a   Harris, Chris ^a   Timmons, Mike ^b  

^a Spire Semiconductor   (United States)

^b Independent Consultant   (United States)

Author keywords

Photovoltaic cells; solar energy

Indexed keywords

BOTTOM CELLS; CONCENTRATOR PHOTOVOLTAICS; CONCENTRATOR SOLAR CELLS; DOPING LAYERS; GAAS; GROWTH TECHNIQUES; INGAP/GAAS/INGAAS; LATTICE-MATCHED; LATTICE-MISMATCHED; PSEUDOMORPHIC LAYERS; SUB-CELLS; TEMPERATURE COEFFICIENT; THREADING DISLOCATION; WATER RINSE; WAVELENGTH RESPONSE;

GALLIUM ARSENIDE; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SOLAR ENERGY;

CONCENTRATION (PROCESS);

EID: 84865181077     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2189369     Document Type: Article

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