42.3% Efficient InGaP/GaAs/InGaAs concentrators using bifacial epigrowth

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 000771-000774

  Chiu, P ^a   Wojtczuk, S ^a   Zhang, X ^a   Harris, C ^a   Pulver, D ^a   Timmons, M ^b  

^a Spire Semiconductor   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATOR CELLS; CURRENT MATCHING; EPITAXIAL LIFTOFF; EPITAXIALLY GROWN; EPIWAFERS; GAAS; GAAS WAFER; INGAP/GAAS/INGAAS; LATTICE-MATCHED; LATTICE-MISMATCHED; MANUFACTURING PROCESS; PROCESS STEPS; TRIPLE JUNCTION CELLS; WAFER SURFACE; WORLD RECORDS;

CYTOLOGY; EPITAXIAL GROWTH; GALLIUM ARSENIDE; GERMANIUM; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM; SILICON WAFERS;

CELLS;

EID: 84861043613     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186067     Document Type: Conference Paper

References (7)

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