Wide band gap gallium phosphide solar cells

IEEE Journal of Photovoltaics

Volumn 2, Issue 2, 2012, Pages 214-220

  Lu, Xuesong ^a   Huang, Susan ^b   Diaz, Martin B ^c   Kotulak, Nicole ^c   Hao, Ruiying ^d   Opila, Robert ^c   Barnett, Allen ^e  

^a APPLIED MATERIALS INC   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c UNIVERSITY OF DELAWARE   (United States)

^d Crystal Solar Inc   (United States)

^e UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Gallium phosphide (GaP); liquid phase epitaxy (LPE); quantum efficiency (QE); wide band gap

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; MULTI JUNCTION SOLAR CELLS; ONE-SUN ILLUMINATION; PREDICTIVE MODELS; SEMICONDUCTOR LAYERS; SOLAR CELL PERFORMANCE; SOLAR CELL STRUCTURES; WIDE BAND GAP;

ENERGY GAP; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM PHOSPHIDE; LIQUID PHASE EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM;

SOLAR CELLS;

EID: 84865169777     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2011.2182180     Document Type: Article

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