Eliminating the fine structure splitting of excitons in self-assembled InAs/GaAs quantum dots via combined stresses

Applied Physics Letters

Volumn 101, Issue 6, 2012, Pages

  Wang, Jianping ^a   Gong, Ming ^b   Guo, Guang Can ^a   He, Lixin ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b WASHINGTON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMBINED STRESS; EMPIRICAL PSEUDO-POTENTIAL; ENTANGLED PHOTON PAIRS; ENTANGLED PHOTONS; FINE-STRUCTURE SPLITTING; HIGH QUALITY; INAS/GAAS QUANTUM DOTS; INGAAS/GAAS; LOWER BOUNDS; MODEL HAMILTONIANS; SELF ASSEMBLED QUANTUM DOTS; SELF-ASSEMBLED; TWO-LEVEL MODELS; UNIAXIAL STRESS;

PHOTONS; SEMICONDUCTOR QUANTUM DOTS;

EXCITONS;

EID: 84865128999     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4745188     Document Type: Article

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