Effects of V-ion doping on the photoelectrochemical properties of epitaxial TiO 2(110) thin films on Nb-doped TiO 2 (110) single crystals

Journal of Physical Chemistry C

Volumn 116, Issue 32, 2012, Pages 16951-16956

  Hachiya, Atsushi ^a   Takata, Shintaro ^a   Komuro, Yutaro ^a   Matsumoto, Yuji ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AG/AGCL; DOPING LEVELS; ELECTRODE POTENTIALS; ELECTRODE SURFACES; FLAT BAND; IMPURITIES IN; IN-GAP STATE; INTERFACIAL ELECTRON TRANSFER; LINEAR RELATIONSHIPS; METAL PARTICLE; NON-DOPED; PHOTO-ELECTRODES; PHOTOCURRENT DENSITY; PHOTOELECTROCHEMICAL PROPERTIES; RECOMBINATION CENTERS; SINGLE-CRYSTAL SUBSTRATES; TIO; V-DOPING;

CRYSTAL IMPURITIES; ELECTROCHEMISTRY; ELECTROLYTES; EPITAXIAL FILMS; EPITAXIAL GROWTH; PHOTOCURRENTS; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING;

TITANIUM DIOXIDE;

EID: 84865113836     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp307185d     Document Type: Article

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