3-3.6-GHz wideband GaN Doherty power amplifier exploiting output compensation stages

IEEE Transactions on Microwave Theory and Techniques

Volumn 60, Issue 8, 2012, Pages 2543-2548

  Rubio, Jorge Moreno ^a   Fang, Jie ^b   Camarchia, Vittorio ^a,c   Quaglia, Roberto ^b   Pirola, Marco ^b   Ghione, Giovanni ^b  

^a UNIVERSIDAD PEDAGÓGICA Y TECNOLÓGICA DE COLOMBIA   (Colombia)

^b POLITECNICO DI TORINO   (Italy)

^c ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

Author keywords

Broadband matching networks; Doherty power amplifiers (PAs); GaN based field effect transistors (FETs); wideband microwave amplifiers; WiMAX

Indexed keywords

AMPLIFIER BANDWIDTH; BROADBAND MATCHING NETWORKS; CLASS A; DOHERTY POWER AMPLIFIER; DRAIN EFFICIENCY; EXPERIMENTAL CHARACTERIZATION; FREQUENCY RANGES; GAIN EQUALIZATION; GAN HEMTS; HIGHER FREQUENCIES; MAIN AMPLIFIERS; MAXIMUM OUTPUT POWER; MAXIMUM POWER; OUTPUT POWER; SECOND-HARMONIC; SIMPLE APPROACH; STATE OF THE ART; UPPER LIMITS; UTILIZATION FACTOR; WIDE-BAND; WIDEBAND OPERATION;

BANDWIDTH; DOHERTY AMPLIFIERS; EFFICIENCY; ELECTRIC POWER UTILIZATION; FREQUENCY BANDS; GALLIUM ALLOYS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE AMPLIFIERS; WIMAX;

GALLIUM NITRIDE;

EID: 84864695953     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2012.2201745     Document Type: Article

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