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Journal of the Vacuum Society of Japan

Volumn 55, Issue 7, 2012, Pages 328-332

Single-electron transistor made by au nanoparticles and nanogap electrodes

(1) Majima, Yutaka a,b

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AU NANOPARTICLE; COULOMB DIAMONDS; ELECTROLESS AU PLATING; FABRICATION TECHNIQUE; GAP SEPARATION; HIGH CHARGE SENSITIVITY; HIGH STABILITY; LOW-POWER CONSUMPTION; NANO-DEVICES; NANOGAP ELECTRODES; PROCESS YIELD; SUBNANOMETERS; TOP-DOWN PROCESS;

CHEMISORPTION; ELECTRODES; NANOPARTICLES; NANOSTRUCTURED MATERIALS;

GOLD;

EID: 84864687006 PISSN: 18822398 EISSN: 18824749 Source Type: Journal
DOI: 10.3131/jvsj2.55.328 Document Type: Review

Times cited : (3)

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