Carrier density dependence of the nonlinear absorption of intense THz radiation in GaAs

Optics Express

Volumn 20, Issue 16, 2012, Pages 18016-18024

  Sharma, G ^a   Al Naib, I ^a   Hafez, H ^a   Morandotti, R ^a   Cooke, D G ^b   Ozaki, T ^a  

^a INRS EMT   (Canada)

^b MCGILL UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SCATTERING; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM;

ABSORPTION BLEACHING; DENSITY DEPENDENCE; ELECTRON TRANSPORT; ELECTRON-HOLE SCATTERINGS; FIELD-INDUCED; GAAS; INTERVALLEY SCATTERING; NON PARABOLICITY; NONLINEAR ABSORPTIONS; PHOTOCARRIER; TERAHERTZ; THZ FIELDS; THZ RADIATION;

CARRIER CONCENTRATION;

EID: 84864626953     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.018016     Document Type: Article

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