Interband impact ionization by terahertz illumination of InAs heterostructures

Applied Physics Letters

Volumn 69, Issue 26, 1996, Pages 3975-3977

  Markelz, A G ^a,c   Asmar B, N G ^a,d   Brar, B ^a,b,e   Gwinn, E G ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d Worlds Inc   (United States)

^e TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; FREE ELECTRON LASERS; INFRARED RADIATION; IONIZATION; LIGHT POLARIZATION; LIGHT REFLECTION; PERMITTIVITY; RELAXATION PROCESSES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

CHARGE DENSITY; FAR INFRARED RADIATION; INTERBAND IMPACT IONIZATION;

HETEROJUNCTIONS;

EID: 0030393957     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117842     Document Type: Article

References (17)

1. G. Tuttle, H. Kroemer, and J. H. English, J. Appl. Phys. 67, 3032 (1990).
2. C. R. Bolognesi, E. S. Caine, and H. Kroemer, IEEE Electron Device Lett. 15, 16 (1994).
3. H. Xie, W. I. Wang, and J. R. Meyer, J. Appl. Phys. 76, 92 (1994).
4. A. G. Markelz, E. G. Gwinn, M. S. Sherwin, C. Nguyen, and H. Kroemer, Solid-State Electron. 37, 1243 (1994).
5. A. G. Markelz, N. G. Asmar, E. G. Gwinn, M. S. Sherwin, C. Nguyen, and H. Kroemer, Semicond. Sci. Technol. 9, 634 (1994).
6. C. Nguyen, B. Brar, C. R. Bolognesi, J. J. Pekarik, H. Kroemer, and J. H. English, J. Electron. Mater. 22, 255 (1993).
7. C. Gauer, J. Scriba, A. Wixforth, J. P. Kotthaus, C. R. Bolognesi, C. Nguyen, B. Brar, and H. Kroemer, Semicond. Sci. Technol. 9, 1580 (1994); the two-band Kane model has been verified for InAs/AlSb square wells by cyclotron mass measurements.
8. H. U. Baier, L. Koenders, and W. Monch, Solid State Commun. 58, 327 (1986).
9. C. Nguyen, B. Brar, and H. Kroemer, J Vac. Sci. Technol. B 11, 1706 (1993).
10. J. N. Walpole and K. W. Nill, J. Appl. Phys. 42, 5609 (1971).
11. N. G. Asmar, A. G. Markelz, E. G. Gwinn, J. Cerne, M. S. Sherwin, K. L. Campman, P. F. Hopkins, and A. C. Gossard, Phys. Rev. B 51, 18 041 (1995).
12. N. G. Asmar, J. Cerne, A. G. Markelz, E. G. Gwinn, M. S. Sherwin, K. L. Campman, and A. C. Gossard, Appl. Phys. Lett. 68, 829 (1996).
13. J. Cerne, A. G. Markelz, M. S. Sherwin, S. J. Allen, M. Sundaram, A. C. Gossard, P. C. van Sohn, and D. Bimberg, Phys. Rev. B 51, 5253 (1995).
14. C. R. H. White, M. S. Skolnick, L. Eaves, and M. L. Leadbeater, Appl. Phys. Lett. 58, 1164 (1991).
15. S. D. Ganichev, A. P. Dmitriev, S. A. Emel'yanov, Ya. V. Terent'ev, I. D. Yaroshetskii, and I. N. Yassievich, Sov. Phys. JETP 63, 256 (1986).
16. B. Kochman, K. Yeom, and J. Singh, Appl. Phys. Lett. 68, 1936 (1996).
17. N. Bloembergen, Quantum Electron. QE-10, 375 (1974).