Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump-terahertz probe measurements

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 3, 2010, Pages

  Hebling, János ^a,b   Hoffmann, Matthias C ^a,c   Hwang, Harold Y ^a   Yeh, Ka Lo ^a   Nelson, Keith A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF PÉCS   (Hungary)

^c UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77951563069     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.035201     Document Type: Article

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