Interface induced inverse spin Hall effect in bismuth/permalloy bilayer

Applied Physics Letters

Volumn 101, Issue 4, 2012, Pages

  Hou, Dazhi ^a   Qiu, Z ^b,c   Harii, K ^d   Kajiwara, Y ^b   Uchida, K ^b   Fujikawa, Y ^b   Nakayama, H ^b   Yoshino, T ^b   An, T ^b   Ando, K ^b   Jin, Xiaofeng ^a   Saitoh, E ^b,c,d  

^a FUDAN UNIVERSITY   (China)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; BI-LAYER FILMS; BILAYER SYSTEMS; HALL VOLTAGE; ROOM TEMPERATURE; SINK-IN; SPIN HALL CURRENTS; SPIN TRANSPORT; SPIN-PUMPING; THICKNESS DEPENDENCE;

BISMUTH; SPIN HALL EFFECT;

CRYSTAL SYMMETRY;

EID: 84864429122     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4738786     Document Type: Article

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