TEM observation of directly bonded interface between Si and SiC

IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai

Volumn , Issue , 2012, Pages 80-81

  Kurumi, Takamasa ^a   Araki, Ryosuke ^a   Kinoshita, Hiroyuki ^a   Yoshimoto, Masahiro ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

heat dissipation; silicon carbide; TEM; wafer bonding

Indexed keywords

BONDED INTERFACE; SELF-HEATING EFFECT; SI MOSFET; SI WAFER; SINGLE-CRYSTALLINE; TEM OBSERVATIONS; TRANSMISSION ELECTRON MICROSCOPE;

ELECTRON DEVICES; HEAT LOSSES; SILICON; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; WAFER BONDING;

SILICON WAFERS;

EID: 84864190693     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMFEDK.2012.6218591     Document Type: Conference Paper

References (3)

1. D. Vasileska, K. Saleva, and S.M. Goodnick, J Comput Electron 7, 66-93 (2008).
2. H. Shinohara, H. Kinoshita, and M. Yoshimoto, "Si metal-oxide-semiconductor field-effect transistor on Si-on-SiC directly bonded wafers with high thermal conduction," Appl. Phys. Lett., vol. 93, 122110, September 2008.
3. M. Yoshimoto, H. Shinohara, and H. Kinoshita, "Reduction of selfheating effect in silicon MOSFETs on directly bonded Si-on-SiC wafer with high heat conductance," Device Research Conference 2009, University Park PA, USA, pp. 265-266, June 2009.