Reduction of self-heating effect in silicon MOSFETs on directly bonded Si-on-SiC wafer with high heat conductance

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 265-266

  Yoshimoto, Masahiro ^a   Shinohara, Hiroshi ^a   Kinoshita, Hiroyuki ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT CONDUCTANCE; MOSFETS; ROOM TEMPERATURE; SELF-HEATING EFFECT; SI DEVICES; SI WAFER; SINGLE-CRYSTALLINE;

SILICON; SILICON CARBIDE; SILICON WAFERS; WAFER BONDING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 76549100400     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354925     Document Type: Conference Paper

References (0)