Enhancement of photoluminescence emission intensity of zirconia thin films via aluminum doping for the application of solid state lighting in light emitting diode

Journal of Luminescence

Volumn 132, Issue 11, 2012, Pages 3077-3081

  John Berlin, I ^a   Maneeshya, L V ^a   Thomas, Jijimon K ^a   Thomas, P V ^a   Joy, K ^a  

^a MAR IVANIOS COLLEGE   (India)

Author keywords

Aluminum; Photoluminescence; Scanning electron microscope (SEM); Sol gel; Thin film; Zirconia

Indexed keywords

AL DOPED; AL-CONCENTRATION; AL-DOPING; BLUE SHIFT; CRACK-FREE SURFACES; CRYSTALLINITIES; DOPING CONCENTRATION; EMISSION INTENSITY; PHOTOLUMINESCENCE EMISSION; PHOTOLUMINESCENCE SPECTRUM; PL INTENSITY; PL SPECTRA; QUARTZ SUBSTRATE; RED SHIFT; SCANNING ELECTRON MICROSCOPE; SOL-GEL DIP COATING TECHNIQUE; SOLID STATE LIGHTING;

ALUMINUM; LIGHT EMITTING DIODES; LIGHTING; PHOTOLUMINESCENCE; QUARTZ; SCANNING ELECTRON MICROSCOPY; SOL-GELS; THIN FILMS; X RAY DIFFRACTION; ZIRCONIA; ZIRCONIUM ALLOYS;

SEMICONDUCTOR DOPING;

EID: 84864068373     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2012.06.027     Document Type: Article

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