Solution processed Al doped ZnO film fabrication through electrohydrodynamic atomization

Thin Solid Films

Volumn 520, Issue 20, 2012, Pages 6398-6403

  Muhammad, Nauman Malik ^a,c   Duraisamy, Navaneethan ^a   Dang, Hyun Woo ^a   Jo, Jeongdai ^b   Choi, Kyung Hyun ^a  

^a Jeju National University   (South Korea)

^b Korea Institute of Machine and Materials   (South Korea)

^c PAKISTAN ATOMIC ENERGY COMMISSION   (Pakistan)

Author keywords

Electrohydrodynamic atomization; Opto electronics; Thin films; Window layers; ZnO:Al

Indexed keywords

AL-DOPED ZNO; AMBIENT CONDITIONS; CURRENT-VOLTAGE MEASUREMENTS; DEPOSITION PROCESS; ELECTROHYDRODYNAMIC ATOMIZATION; FOURIER TRANSFORM INFRARED; GLASS SUBSTRATES; MONO-DISPERSED; SOLUTION-PROCESSED; SOLUTION-PROCESSING; SURFACE INTEGRITY; TRANSPARENT FILMS; WINDOW LAYER; ZNO;

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; ETHANOL; PHOTOELECTRONS; SEMICONDUCTOR DOPING; SUBSTRATES; SYNTHESIS (CHEMICAL); THICK FILMS; THIN FILMS; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

ALUMINUM;

EID: 84863982973     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.06.050     Document Type: Article

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