SCOPUS 정보 검색 플랫폼

Advanced Energy Materials

Volumn 2, Issue 6, 2012, Pages 662-669

Extracting microscopic device parameters from transient photocurrent measurements of P3HT:PCBM solar cells

(4) MacKenzie, Roderick C I a,b Shuttle, Christopher G c Chabinyc, Michael L c Nelson, Jenny a,b

a IMPERIAL COLLEGE LONDON (United Kingdom)

b UNIVERSITY OF FREIBURG (Germany)

c University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSIENT ANALYSIS; SOLAR CELLS; TIME DOMAIN ANALYSIS;

DRIFT-DIFFUSION MODEL; ELECTRONIC DISORDER; MEASUREMENT TECHNIQUES; MOLECULAR PACKINGS; RECOMBINATION RATE; STEADY-STATE CURRENTS; TRANSIENT PHOTOCURRENTS; TRANSIENT PHOTOVOLTAGE; CARRIER TRAPPING; CURRENT VOLTAGE; CURRENT VOLTAGE CURVE; DE-TRAPPING; DEVICE PARAMETERS; ENERGY SPACES; GAUSSIANS; HOLE DENSITIES; MODEL PARAMETERS; OPEN CIRCUITS; PHOTO-VOLTAGE; TIME DOMAIN; TRAPPED CARRIERS;

SOLAR CELLS; POWER QUALITY;

EID: 84863695755 PISSN: 16146832 EISSN: 16146840 Source Type: Journal
DOI: 10.1002/aenm.201100709 Document Type: Article

Times cited : (172)

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