Investigation of the stability of boron-doped zinc oxide films grown by low-pressure chemical vapor deposition

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 7, 2012, Pages 1259-1265

  Zhu, H ^a   Feng, Y ^a   Zhang, L ^a   Lai, B ^a   He, T ^a   Liu, D ^a   Wang, Y ^a   Yin, J ^a   Ma, Y ^a   Huang, Y ^a   Jia, H ^a   Mai, Y ^a  

^a Baoding Tianwei Solarfilms Co Ltd   (China)

Author keywords

damp heat test; stability; thermal treatment; zinc oxide

Indexed keywords

BORON-DOPED; DAMP-HEAT EXPOSURE; DAMP-HEAT TEST; DEVICE PERFORMANCE; DOPED ZNO; DOPING LEVELS; HIGH DOPING LEVEL; NEAR-INFRARED WAVELENGTH; NIR WAVELENGTH; OPTICAL AND ELECTRICAL PROPERTIES; POST THERMAL TREATMENT; PRACTICAL MASS; RESISTANCE INCREASE; SOLAR MODULE; THIN-FILM SOLAR CELLS; THREE ORDERS OF MAGNITUDE; TOTAL TRANSMISSION; TRANSPARENT CONDUCTIVE OXIDE FILMS; ZNO;

CHEMICAL VAPOR DEPOSITION; CONDUCTIVE FILMS; CONVERGENCE OF NUMERICAL METHODS; DEGRADATION; ELECTRIC PROPERTIES; HEAT TREATMENT; INFRARED DEVICES; OXIDE FILMS; STABILITY; VAPORS; WAVELENGTH; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 84863675127     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127746     Document Type: Article

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