Fast detection of single-charge tunneling to a graphene quantum dot in a multi-level regime

Applied Physics Letters

Volumn 101, Issue 1, 2012, Pages

  Muller T ^a,b   Guttinger J ^a,c   Bischoff, D ^a   Hellmuller S ^a   Ensslin, K ^a   Ihn, T ^a  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY ICN2   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; CHARGE SENSORS; DOPED SILICON; EXPERIMENTAL OBSERVATION; MATCHING NETWORKS; RADIO FREQUENCIES; REFLECTOMETRY; SINGLE QUANTUM DOT; STRAY CAPACITANCES; TUNABILITIES; TUNNELING REGIME;

CAPACITANCE; SEMICONDUCTOR QUANTUM DOTS; SILICON OXIDES;

GRAPHENE;

EID: 84863667212     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4733613     Document Type: Article

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