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Volumn 1, Issue 6, 2011, Pages 1109-1115

Chalcopyrite semiconductors for quantum well solar cells

(9) Afshar, Maziar a,e Sadewasser, Sascha a,f Albert, Jürgen a Lehmann, Sebastian a,g Abou Ras, Daniel a Fuertes Marrón, David b Rockett, Angus A c Räsänen, Esa d Lux Steiner, Martha Ch a

a HAHN MEITNER INSTITUT (Germany)

b INSTITUTO DE ENERGÍA SOLAR (Spain)

c United States of America (United States)

d UNIVERSITY OF JYVÄSKYLÄ (Finland)

e SAARLAND UNIVERSITY (Germany)

f INTERNATIONAL IBERIAN NANOTECHNOLOGY LABORATORY (Portugal)

g LUND UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATING LAYERS; CHALCOPYRITE SEMICONDUCTOR; CHALCOPYRITE-TYPE; CHARGE CARRIER CONFINEMENT; COMPOSITIONAL ANALYSIS; CU(IN , GA)SE; EFFECTIVE MASS APPROXIMATION; GAAS(1 0 0); LOW BAND GAP; QUANTIZATION OF ENERGY; QUANTUM WELL SOLAR CELLS; QUANTUM WELL STRUCTURES; THREE-LAYER;

GALLIUM; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WELLS; SOLAR CELLS;

COPPER COMPOUNDS;

EID: 84863667094 PISSN: 16146832 EISSN: 16146840 Source Type: Journal
DOI: 10.1002/aenm.201100362 Document Type: Article

Times cited : (6)

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