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Volumn 431-432, Issue , 2003, Pages 186-189

Defect spectra in epitaxial CuInSe2 grown by MOVPE

Author keywords

CuInSe2; Defects; MOVPE; Photoluminescence

Indexed keywords

COPPER COMPOUNDS; DEFECTS; ENERGY GAP; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SPECTRUM ANALYSIS;

EID: 0038018549     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00188-3     Document Type: Conference Paper
Times cited : (34)

References (17)
  • 2
    • 0035557040 scopus 로고    scopus 로고
    • R. Birkmire, R. Noufi, D. Lincot, H.W. Schock (Eds.), II-VI Compounds Semiconductors Photovoltaic Materials, San Francisco, California, USA April 16-20, 2001
    • U. Rau, K. Weinert, Q. Nguyen, M. Mamor, G. Hanna, A. Jasenek, H.W. Schock, in: R. Birkmire, R. Noufi, D. Lincot, H.W. Schock (Eds.), II-VI Compounds Semiconductors Photovoltaic Materials, San Francisco, California, USA April 16-20, 2001, Mat. Res. Soc. Symp. Proc. 668, 2001, p. H9.1.1-12.
    • (2001) Mat. Res. Soc. Symp. Proc. , vol.668
    • Rau, U.1    Weinert, K.2    Nguyen, Q.3    Mamor, M.4    Hanna, G.5    Jasenek, A.6    Schock, H.W.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.