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Volumn 101, Issue 1, 2012, Pages

Intrinsic ultrathin topological insulators grown via molecular beam epitaxy characterized by in-situ angle resolved photoemission spectroscopy

(6) Lee, J J a,b,c Schmitt, F T b,c Moore, R G b,c Vishik, I M a,b,c Ma, Y a,b,c Shen, Z X a,b,c

a STANFORD UNIVERSITY (United States)

b SLAC NATIONAL ACCELERATOR LABORATORY (United States)

c STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; DIRECT PROBE; DOPED FILMS; EX-SITU ATOMIC FORCE MICROSCOPY; FLUX RATES; GROWTH TECHNIQUES; HIGH QUALITY; IN-SITU; THERMAL CRACKER; TOPOLOGICAL INSULATORS; ULTRA-THIN;

ATOMIC FORCE MICROSCOPY; CONDUCTION BANDS; ELECTRIC INSULATORS; EPITAXIAL GROWTH; FERMI LEVEL; FILM GROWTH; MOLECULAR BEAM EPITAXY;

ULTRATHIN FILMS;

EID: 84863647068 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4733317 Document Type: Article

Times cited : (37)

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