|
Volumn 22, Issue 28, 2012, Pages 13977-13985
|
The realization of a high thermoelectric figure of merit in Ge-substituted β-Zn 4Sb 3 through band structure modification
|
Author keywords
[No Author keywords available]
|
Indexed keywords
DEGREE OF DISORDER;
DENSITY OF STATE;
EFFECTIVE MASS;
FIGURE OF MERITS;
HIGH POWER FACTOR;
LOW THERMAL CONDUCTIVITY;
P-TYPE;
PBTE;
POWER FACTORS;
STRUCTURE MODIFICATION;
TEMPERATURE RANGE;
THERMOELECTRIC ENERGY;
THERMOELECTRIC FIGURE OF MERIT;
THERMOELECTRIC PERFORMANCE;
VALENCE BAND EDGES;
BAND STRUCTURE;
ELECTRIC POWER FACTOR;
GERMANIUM;
THALLIUM COMPOUNDS;
THERMOELECTRICITY;
ZINC;
ANTIMONY COMPOUNDS;
|
EID: 84863637924
PISSN: 09599428
EISSN: 13645501
Source Type: Journal
DOI: 10.1039/c2jm30906h Document Type: Article |
Times cited : (57)
|
References (46)
|