Spectral distribution of photoelectrical current and free carrier life time of Te x(Sb 10Se 90) 100-x thin films

Journal of Alloys and Compounds

Volumn 538, Issue , 2012, Pages 40-44

  Abdel Rahim, Farid M ^a,b   Aly, K A ^a,b   Shatir, Tahani M ^a,c  

^a KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

^b Al Azhar University   (Egypt)

^c UNIVERSITY OF KHARTOUM   (Sudan)

Author keywords

Optical properties; Photoconductivity; Thin films

Indexed keywords

COMPLEX INDEX OF REFRACTION; DOUBLE-BEAM; ELECTRIC FILED; ELECTRICAL CONDUCTION; ENVELOPE METHOD; FREE CARRIER LIFE TIME; LIGHT INTENSITY; LOCALIZED STATE; NORMAL INCIDENCE; POWER LOW; RECOMBINATION PROCESS; SPECTRAL DISTRIBUTION; STEADY STATE; STEADY-STATE PHOTOCONDUCTIVITY; TEMPERATURE RANGE; WAVELENGTH RANGES; WORK STUDY;

ACTIVATION ENERGY; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; REFRACTIVE INDEX; THIN FILMS; WAVELENGTH;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84863459981     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.05.042     Document Type: Article

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