Roles of interstitial Mg in improving thermoelectric properties of Sb-doped Mg 2Si 0.4Sn 0.6 solid solutions

Journal of Materials Chemistry

Volumn 22, Issue 14, 2012, Pages 6838-6844

  Du, Zhengliang ^a   Zhu, Tiejun ^a   Chen, Yi ^a   He, Jian ^b   Gao, Hongli ^a   Jiang, Guangyu ^a   Tritt, Terry M ^b   Zhao, Xinbing ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b CLEMSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL ANALYSIS; EFFECTIVE MASS; ELECTRICAL CONDUCTIVITY; HALL COEFFICIENT MEASUREMENTS; INTERSTITIALS; LATTICE THERMAL CONDUCTIVITY; PARABOLIC BAND MODEL; SB-DOPED; THERMOELECTRIC PROPERTIES; TUNING PARAMETER;

ELECTRIC CONDUCTIVITY; SILICON; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; TIN; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY POWDER DIFFRACTION;

THERMOELECTRICITY;

EID: 84863376333     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/c2jm16694a     Document Type: Article

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