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Applied Physics Letters

Volumn 100, Issue 10, 2012, Pages

Near-infrared photoluminescence from ZnO

(6) Wang, Mingsong a Zhou, Yajun a Zhang, Yiping a Jung Kim, Eui b Hong Hahn, Sung b Gie Seong, Seung c

a JIANGSU UNIVERSITY (China)

b University of Ulsan (South Korea)

c Ulsan National Institute of Science and Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; DONOR-ACCEPTORS; NEAR INFRA RED; NEAR-INFRARED PHOTOLUMINESCENCE; NIR EMISSION; RADIATIVE RECOMBINATION; TRANSITION LEVEL; TRAPPED ELECTRONS; ZNO;

PHOTOLUMINESCENCE; POINT DEFECTS; ZINC OXIDE;

INFRARED DEVICES;

EID: 84863362567 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3692584 Document Type: Article

Times cited : (103)

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