Effect of indium doping and annealing on photoconducting property of wurtzite type CdS

Electronic Materials Letters

Volumn 8, Issue 3, 2012, Pages 295-299

  Singh, Vineet Kumar ^a   Chauhan, Pratima ^a   Mishra, Sheo Kumar ^a   Srivastava, Rajneesh K ^a  

^a UNIVERSITY OF ALLAHABAD   (India)

Author keywords

luminescence; photoconductivity; semiconductors; solid state reactions; x ray diffraction

Indexed keywords

ABSORPTION EDGES; ANNEALED SAMPLES; ANOMALOUS BEHAVIOR; BLUE SHIFT; CDS; DECAY TIME; DOPED SAMPLE; EFFECT OF DOPING; ENERGY DISPERSIONS; HEXAGONAL WURTZITE; INDIUM DOPING; PHOTOLUMINESCENCE SPECTRUM; SOLID STATE REACTION METHOD; SWITCHING PERFORMANCE; SWITCHING PROPERTIES; UV VISIBLE ABSORPTION SPECTRUM; WURTZITE TYPE; X RAY SPECTRUM;

ANNEALING; CADMIUM; CADMIUM COMPOUNDS; CADMIUM SULFIDE; DARK CURRENTS; LUMINESCENCE; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SOLID STATE REACTIONS; SULFUR; X RAY DIFFRACTION; ZINC SULFIDE;

INDIUM;

EID: 84863319505     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-012-2011-4     Document Type: Article

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