Low-temperature poly-Si TFT transferred onto plastic substrates by using surface free technology by laser ablation/annealing (SUFTLA®)

Journal of the Society for Information Display

Volumn 10, Issue 1, 2002, Pages 69-73

  Utsunomiya, Sumio ^a   Inoue, Satoshi ^a   Shimoda, Tatsuya ^a  

^a SEIKO EPSON CORPORATION   (Japan)

Author keywords

Excimer lasers; Flexible substrates; Laser ablation; Laser annealing; Polysilicon TFTs; Transfer

Indexed keywords

ANNEALING; EXCIMER LASERS; LASER ABLATION; LOW TEMPERATURE EFFECTS; SURFACE PROPERTIES; THIN FILM TRANSISTORS;

LASER ANNEALING; SURFACE FREE TECHNOLOGY;

POLYSILICON;

EID: 0036254401     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/1.1827846     Document Type: Article

References (11)

1. Thin-film-transistor- and diode-addressed AMLCDs on polymer substrates
2. A MIM-driven transmissive display with color filters on 2-in.-diagonal plastic substrates
3. AMLCD on plastic substrates
4. High mobility thin film transistors fabricated on a plastic substrate at a processing temperature of 110°C
5. Surface free technology by laser annealing (SUFTLA)
6. Low temperature poly-Si TFT transferred onto plastic substrate by using surface free technology by laser ablation/annealing
7. Polysilicon TFT on plastics