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Volumn 51, Issue 7, 2012, Pages 894-897

Schottky barrier characteristics and internal gain mechanism of TiO 2 UV detectors

Author keywords

[No Author keywords available]

Indexed keywords

GOLD; NICKEL; PHOTODETECTORS; PHOTONS; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION;

EID: 84863288637     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.51.000894     Document Type: Conference Paper
Times cited : (15)

References (15)
  • 1
    • 0038587746 scopus 로고    scopus 로고
    • Photosensing properties of interdigitated metal-semiconductor-metal structures with undepleted region
    • T. Masu, S. Khunkhao, K. Kobayashi, S. Niemcharoen, S. Supadech, and K. Sato, "Photosensing properties of interdigitated metal-semiconductor-metal structures with undepleted region," Solid-State Electron. 47, 1385-1390 (2003).
    • (2003) Solid-State Electron. , vol.47 , pp. 1385-1390
    • Masu, T.1    Khunkhao, S.2    Kobayashi, K.3    Niemcharoen, S.4    Supadech, S.5    Sato, K.6
  • 2
    • 0029679012 scopus 로고    scopus 로고
    • Simple analytical model of bias dependence of the photocurrent of metal-semiconductor-metal photodetectors
    • L. Liou and B. Nabet, "Simple analytical model of bias dependence of the photocurrent of metal-semiconductor-metal photodetectors," Appl. Opt. 35, 15-23 (1996). (Pubitemid 126590846)
    • (1996) Applied Optics , vol.35 , Issue.1 , pp. 15-23
    • Liou, L.-C.1    Nabet, B.2
  • 4
    • 44749093594 scopus 로고    scopus 로고
    • Determination of lateral barrier height of identically prepared Ni/ntype Si Schottky barrier diodes by electrodeposition
    • G. Guler, O. Gullu, O. F. Bakkaloglu, and A. Turut, "Determination of lateral barrier height of identically prepared Ni/ntype Si Schottky barrier diodes by electrodeposition," Physica B 403, 2211-2214 (2008).
    • (2008) Physica B , vol.403 , pp. 2211-2214
    • Guler, G.1    Gullu, O.2    Bakkaloglu, O.F.3    Turut, A.4
  • 12
    • 0036682880 scopus 로고    scopus 로고
    • 2(1 1 0) interface
    • DOI 10.1016/S0039-6028(02)01873-3, PII S0039602802018733
    • 2 (110) interface," Surf. Sci. 515, 175-186 (2002). (Pubitemid 34862929)
    • (2002) Surface Science , vol.515 , Issue.1 , pp. 175-186
    • Lopez, N.1    Norskov, J.K.2
  • 15
    • 0345822019 scopus 로고    scopus 로고
    • Gain mechanism in GaN Schottky ultraviolet detectors
    • DOI 10.1063/1.1394717
    • O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, "Gain mechanism in GaN Schottky ultraviolet detectors," Appl. Phys. Lett. 79, 1417-1419 (2001). (Pubitemid 33666192)
    • (2001) Applied Physics Letters , vol.79 , Issue.10 , pp. 1417-1419
    • Katz, O.1    Garber, V.2    Meyler, B.3    Bahir, G.4    Salzman, J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.