Photosensing properties of interdigitated metal-semiconductor-metal structures with undepleted region

Solid-State Electronics

Volumn 47, Issue 8, 2003, Pages 1385-1390

  Masui, T ^a   Khunkhao, S ^a   Kobayashi, K ^a   Niemcharoen, S ^b   Supadech, S ^b   Sato, K ^a  

^a TOKAI UNIVERSITY   (Japan)

^b KING MONGKUT'S INSTITUTE OF TECHNOLOGY LADKRABANG   (Thailand)

Author keywords

Field controlled iris; Metal semiconductor metal structure; Mo n Si Mo; Photocurrent control; Planar optical sensor

Indexed keywords

ELECTRIC POTENTIAL; MATHEMATICAL MODELS; OPTICAL SENSORS; PHOTOCURRENTS;

PLANAR OPTICAL SENSORS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0038587746     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00027-3     Document Type: Article

References (14)

1. Jagannath C., Masum Choudhury A.N.M., Negri A., Elman B., Haugsjaa P. High-speed 1.3 μm InGaAs/GaAs metal-semiconductor-metal photodetector. Appl Phys Lett. 58:1991;325.
2. Wei C.J., Khul D., Boettcher E.H., Bimberg D., Kuphal E. Lateral high-speed metal-semiconductor-metal photodiodes on high-resistivity InGaAs. IEEE Trans ED Lett. 11:1990;334.
3. Han H.K., Her J., Byun Y.T., Lee S., Woo D.H., Lee J.H.et al. Low dark current and high-speed metal-semiconductor-metal photodetector on sulfer-treated InP. Jpn J Appl Phys. 33(part 1):1994;6454.
4. Srivastava A.K., Purandare S.C., Karulker V.T., Arora B.M. Gain mechanism in GaAs metal-semiconductor-metal photodetectors. Int J Optoelectron. 8:1993;431.
5. Nakajima K., Iida T., Sugimoto K., Kan H., Mizushima Y. Properties and design theory of ultrafast GaAs metal-semiconductor-metal photodetector with symmetrical Schottky contacts. IEEE Trans DE. 37:1990;31.
6. Su Y.K., Chiou Y.Z., Juang F.S., Chang S.J., Sheu J.K. GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals. Jpn J Appl Phys. 40(Part1):2001;2996.
7. Niemcharoen S., Ando T., Supadech S., Yasumura Y., Sato K. Observation of photoinduced shot noise in planar Mo/n-Si/Mo structures with undepleted region. Solid-State Electron. 46:2002;481.
8. Sze S.M. Physics of semiconductor devices. 2nd ed. 1981;Wiley, New York.
9. Keyes R.J. Optical and infrared detectors. 1980;Springer, Berlin.
10. Niemcharoen S., Kobayashi K., Kimura M., Sato K. Voltage dependence of photocurrent in metal-semiconductor-metal structures under front-illuminated conditions. Solid-State Electron. 45:2001;1815.
11. Takano H., Kimura H., Ando T., Niemcharoen S., Yasumura Y., Sato K. Optical response of planar Mo/n-Si/Mo structure with long neutral region and Schottky barriers at both ends. Solid-State Electron. 44:2000;2161.
12. Pulfrey D.L. Photovoltaic power generation. 1978;Van Nostrand Reinhold, New York.
13. Averine S.V., Chan Y.C., Lam Y.L. Geometry optimization of interdigitated Schottky-barrier metal-semiconductor-metal photodiode structures. Solid-State Electron. 45:2001;441.
14. Snowden C.M. Semiconductor device modelling. 1988;Peter Peregrinus.