Low temperature magnetothermoelectric effect and magnetoresistance in Te vapor annealed Bi2Te3

Journal of Physics Condensed Matter

Volumn 22, Issue 37, 2010, Pages

  Hor, Y S ^a   Qu, D ^a   Ong, N P ^a   Cava, R J ^a  

^a PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; ANNEALING PROCEDURES; APPLIED MAGNETIC FIELDS; AS-GROWN; AS-GROWN CRYSTAL; CROSS OVER; ELECTRICAL PROPERTY; LOW TEMPERATURES; MAGNETOTHERMOELECTRIC; P-TYPE; P-TYPE CONDUCTIVITY; POSITIVE MAGNETORESISTANCE; ROOM TEMPERATURE; TE VAPOR; TEMPERATURE-DEPENDENT RESISTIVITY;

ANNEALING; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; SINGLE CRYSTALS; VAPORS;

TELLURIUM COMPOUNDS;

BISMUTH; TELLURIUM;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; GAS; MAGNETISM; METHODOLOGY; SEMICONDUCTOR; TEMPERATURE;

BISMUTH; CRYSTALLIZATION; GASES; MAGNETICS; SEMICONDUCTORS; TELLURIUM; TEMPERATURE;

EID: 77957042631     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/37/375801     Document Type: Article

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