Refining of nanopillars induced by Mn-doping in epitaxial Ba(Zr,Ti)O 3 thin films

Integrated Ferroelectrics

Volumn 131, Issue 1, 2011, Pages 72-81

  He, J ^a   Jiang, J C ^a   Meletis, E I ^a   Liu, M ^b   Collins, G ^b   Ma, C R ^b   Chen, C L ^b   Bhalla, A ^c  

^a University of Texas at Arlington   (United States)

^b UNIVERSITY OF TEXAS AT SAN ANTONIO   (United States)

^c The University of Texas at San Antonio   (United States)

Author keywords

defects; epitaxy; microstructure; oxide thin films; TEM

Indexed keywords

BOUNDARY PLANES; COMMON PLANE; EPITAXIAL GRAINS; EPITAXIAL THIN FILMS; EPITAXIALLY GROWN; HIGH-RESOLUTION TEM; LATERAL SIZES; MGO SUBSTRATE; MICROSTRUCTURE EVOLUTIONS; MN IONS; MN-DOPED; MN-DOPING; NANOPILLARS; OXIDE THIN FILMS; TWIN BOUNDARIES; XRD STUDIES;

BARIUM; DEFECTS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MICROSTRUCTURE; PULSED LASER DEPOSITION; REFINING; SEMICONDUCTOR DOPING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZIRCONIUM;

MANGANESE;

EID: 84863124945     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584587.2011.621054     Document Type: Conference Paper

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