Characterization and luminescence properties of Y 2Si 3O 3N 4:Ce 3+ phosphor for white light-emitting-diode

Journal of the Electrochemical Society

Volumn 159, Issue 4, 2012, Pages

  Ma, Y Y ^a   Xiao, F ^a   Ye, S ^a   Zhang, Q Y ^a  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

5D-4F TRANSITIONS; BROAD EMISSION BANDS; CONCENTRATION QUENCHING; DOPING CONCENTRATION; EXCITATION SPECTRUM; HOST LATTICE; LUMINESCENCE PROPERTIES; MIXTURE GAS; PEAK WAVELENGTH; RED SHIFT; SOLID STATE REACTION METHOD; TEMPERATURE DEPENDENT; THERMAL QUENCHING;

ENERGY TRANSFER; HYDROGEN; LIGHT EMITTING DIODES; LUMINESCENCE; NITROGEN; PHOSPHORS; QUENCHING; SOLID STATE REACTIONS; X RAY DIFFRACTION ANALYSIS;

SILICON;

EID: 84863122062     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.006204jes     Document Type: Article

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