The temperature-dependent luminescence properties of BaAl 2-xSixO4-xNx:Eu2+ and its application in yellowish-green light emitting diode

Journal of Materials Research

Volumn 24, Issue 8, 2009, Pages 2589-2595

  Zhang, Mei ^a,b   Li, Baohong ^a   Wang, Jing ^a   Zhang, Zhiyang ^a   Zhang, Qiuhong ^a   Su, Qiang ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b Wuyi University   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CATION SITES; COLOR COORDINATES; ENERGY SHIFT; GREEN LIGHT EMITTING DIODES; HUANG-RHYS FACTORS; LUMINESCENCE PROPERTIES; TEMPERATURE DEPENDENT; THERMAL QUENCHING;

ENERGY TRANSFER; EUROPIUM; GALLIUM NITRIDE; LIGHT; LUMINESCENCE; OPTICAL PROPERTIES; PHYSICAL OPTICS; QUENCHING; SEMICONDUCTING GALLIUM; SILICON; SILICON NITRIDE; WATER ANALYSIS;

LIGHT EMITTING DIODES;

EID: 70049085491     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2009.0325     Document Type: Article

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