Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser

Optics Express

Volumn 20, Issue 4, 2012, Pages 3773-3780

  Matsuo, Shinji ^a   Takeda, Koji ^a   Sato, Tomonari ^a   Notomi, Masaya ^b   Shinya, Akihiko ^b   Nozaki, Kengo ^b   Taniyama, Hideaki ^b   Hasebe, Koichi ^a   Kakitsuka, Takaaki ^a  

^a NTT CORPORATION   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION;

3DB-BANDWIDTH; CONTINUOUS WAVE LASING; CONTINUOUS WAVE OPERATION; CURRENT INJECTIONS; INJECTION CURRENTS; LASING WAVELENGTH; LATERAL CURRENT INJECTIONS; N-TYPE DOPING; ON CHIPS; OUTPUT POWER; OUTPUT WAVEGUIDES; P-I-N STRUCTURE; PHOTONIC NETWORK; ROOM TEMPERATURE; THRESHOLD CURRENTS; ULTRA-SMALL;

CRYSTAL STRUCTURE;

EID: 84863116165     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.003773     Document Type: Article

References (23)

1. I. Hayashi, M. B. Panish, P. W. Foy, and S. Sumski, "Junction lasers which operate continuously at room temperature," Appl. Phys. Lett. 17(3), 109-111 (1970).
2. Zh. I. Alferov, V. M. Andreev, D. Z. Garbuzov, Yu. V. Zhilyaev, E. P. Morozov, E. L. Portnoi, and V. G. Trofim, "Investigation of the influence of the AlAs-GaAs heterostructure parameters on the laser threshold current and the realization of continuous emission at room temperature," Fiz. Tekh. Poluprovodn. 4, 1826 (1970).
3. F. Koyama, S. Kinoshita, and K. Iga, "Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laser," Appl. Phys. Lett. 55(3), 221-222 (1989).
4. Y. Vlasov, W. M. J. Green, and F. Xia, "High-throughput silicon nanophotonic wavelength-insensitive switch for on-chip optical networks," Nat. Photonics 2(4), 242-246 (2008).
5. A. Shacham, K. Bergman, and L. P. Carloni, "Photonic networks-on-chip for future generations of chip multiprocessors," IEEE Trans. Comput. 57(9), 1246-1260 (2008).
6. D. A. B. Miller, "Device requirements for optical Interconnects to silicon chips," Proc. IEEE 97(7), 1166-1185 (2009).
7. S. Matsuo, A. Shinya, C.-H. Chen, K. Nozaki, T. Sato, Y. Kawaguchi, H. Taniyama, and M. Notomi, "20-Gbit/s directly modulated photonic crystal nanocavity laser with ultra-low power consumption," Opt. Express 19(3), 2242-2250 (2011).
8. http://www.itrs.net/Links/2007ITRS/Home2007.htm.
9. M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, "On-chip optical interconnect roadmap: challenges and critical directions," IEEE J. Sel. Top. Quantum Electron. 12(6), 1699-1705 (2006).
10. M. Notomi, A. Shinya, K. Nozaki, T. Tanabe, S. Matsuo, E. Kuramochi, T. Sato, H. Taniyama, and H. Sumikura, "Low power nanophotonic devices based on photonic crystals towards dense photonic network on chip," IET Circuits, Devices Syst. 5(2), 84-93 (2011).
11. M. Notomi, "Strong light confinement with periodicity," Proc. IEEE 99, 1768-1779 (2011).
12. T. Tanabe, M. Notomi, E. Kuramochi, A. Shinya, and H. Taniyama, "Trapping and delaying photons for one nanosecond in an ultrasmall high-Q photonic-crystal nanocavity," Nat. Photonics 1(1), 49-52 (2007).
13. Y. Takahashi, H. Hagino, Y. Tanaka, B.-S. Song, T. Asano, and S. Noda, "High-Q nanocavity with a 2-ns photon lifetime," Opt. Express 15(25), 17206-17213 (2007).
14. H. G. Park, S. H. Kim, S. H. Kwon, Y. G. Ju, J. K. Yang, J. H. Baek, S. B. Kim, and Y. H. Lee, "Electrically driven single-cell photonic crystal laser," Science 305(5689), 1444-1447 (2004).
15. M.-K. Seo, K.-Y. Jeong, J.-K. Yang, Y.-H. Lee, H.-G. Park, and S.-B. Kim, "Low threshold current single-cell hexapole mode photonic crystal laser," Appl. Phys. Lett. 90(17), 171122 (2007).
16. C. M. Long, A. V. Giannopoulos, and K. D. Choquette, "Modified spontaneous emission from laterally injected photonic crystal emitter," Electron. Lett. 45(4), 227-228 (2009).
17. B. Ellis, T. Sarmiento, M. Mayer, B. Zhang, J. Harris, E. E. Haller, and J. Vuckovic, "Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction," Appl. Phys. Lett. 96(18), 181103 (2010).
18. S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, "High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted," Nat. Photonics 4(9), 648-654 (2010).
19. K. Takeda, T. Sato, A. Shinya, K. Nozaki, C.-H. Chen, Y. Kawaguchi, H. Taniyama, M. Notomi, and S. Matsuo, "80°C continuous wave operation of photonic-crystal nanocavity lasers," 23rd International Conference on Indium Phosphide and Related Materials, Berlin, May 2011.
20. T. Tanabe, K. Nishiguchi, E. Kuramochi, and M. Notomi, "Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity," Opt. Express 17(25), 22505-22513 (2009).
21. M. Notomi and H. Taniyama, "On-demand ultrahigh-Q cavity formation and photon pinning via dynamic waveguide tuning," Opt. Express 16(23), 18657-18666 (2008).
22. G. Björk, A. Karlsson, and Y. Yamamoto, "On the linewidth of microcavity laser," Appl. Phys. Lett. 60(3), 304-306 (1992).
23. S. L. Chuang, Physics of Optoelectronic Devices (John Willey & Sons, 1995).