Direct optical observation of band-edge excitons, band gap, and fermi level in degenerate semiconducting oxide nanowires In 2O 3

Journal of Physical Chemistry C

Volumn 115, Issue 50, 2011, Pages 25088-25096

  Ho, Ching Hwa ^a   Chan, Ching Hsiang ^a   Tien, Li Chia ^b   Huang, Ying Sheng ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BOUND EXCITON; BURSTEIN-MOSS SHIFT; CONDUCTION BAND EDGE; DEFECT EMISSION; DONOR-ACCEPTOR PAIR TRANSITIONS; ENERGY VALUE; FREE EXCITONS; HALOGEN LAMPS; LIGHT EMITTING DEVICES; LOW TEMPERATURES; OPTICAL OBSERVATIONS; PHOTOLUMINESCENCE MEASUREMENTS; SEMICONDUCTING OXIDE; THERMOREFLECTANCE; THRESHOLD ENERGY; TRANSITION FEATURES;

NANORODS; NANOWIRES; OPTICAL PROPERTIES;

EXCITONS;

EID: 84863115472     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp208789t     Document Type: Article

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