Electronic structure and origin of visible-light activity of C-doped cubic In2O3 from first-principles calculations

Journal of Physical Chemistry C

Volumn 114, Issue 32, 2010, Pages 13942-13946

  Long, Run ^a   English, Niall J ^a  

^a UNIVERSITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; ADSORPTION EDGES; BAND GAP NARROWING; C-DOPED; CONDUCTION-BAND MINIMUM; DENSITY FUNCTIONAL THEORY CALCULATIONS; DOPED SYSTEMS; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; RED SHIFT; SMALL GAPS; VISIBLE-LIGHT ACTIVITY;

ADSORPTION; CHEMICAL STABILITY; DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; OXYGEN;

DENSITY FUNCTIONAL THEORY;

EID: 77956161711     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp104690v     Document Type: Article

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