Thickness dependence of the amorphous-cubic and cubic-hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride

Thin Solid Films

Volumn 520, Issue 7, 2012, Pages 2976-2978

  Peng, H K ^a,b   Cil, K ^a   Gokirmak, A ^a   Bakan, G ^a   Zhu, Y ^c   Lai, C S ^b   Lam, C H ^c   Silva, H ^a  

^a University of Connecticut   (United States)

^b CHANG GUNG UNIVERSITY   (Taiwan)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

GeSbTe; Phase transition temperature; Phase change memory; Thickness dependence

Indexed keywords

CRYSTALLIZATION TEMPERATURE; GESBTE; GESBTE THIN FILM; PHASE CHANGES; PHASE TRANSITION TEMPERATURES; THICKNESS DEPENDENCE;

AMORPHOUS FILMS; ANTIMONY ALLOYS; PHASE CHANGE MEMORY; PHASE TRANSITIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; TEMPERATURE; TEMPERATURE MEASUREMENT; THIN FILMS;

AMORPHOUS SILICON;

EID: 84863011852     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.11.033     Document Type: Article

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