Nonvolatile write-once-read-many times memory devices based on the composites of poly(4-vinylphenol)/Vulcan XC-72

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 5, 2011, Pages 4492-4495

  Song, Sunghoon ^a   Kim, Tae Wook ^a,b   Cho, Byungjin ^a   Ji, Yongsung ^a   Lee, Takhee ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b University of Washington   (United States)

Author keywords

Cross bar architecture; Organic electronics; Write once read many memory

Indexed keywords

ACTIVE MATERIAL; CROSS-BAR STRUCTURES; ELECTRICAL CHARACTERISTIC; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; NON-VOLATILE; ON/OFF RATIO; ORGANIC ELECTRONICS; ORGANIC MEMORY DEVICES; POLY(4-VINYLPHENOL); RESISTANCE STATE; WRITE-ONCE-READ-MANY; WRITE-ONCE-READ-MANY MEMORY;

NANOSCIENCE; NANOTECHNOLOGY;

MEMORY ARCHITECTURE;

EID: 84863010929     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.3713     Document Type: Conference Paper

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